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Formation of Nanocrystalline Germanium via Oxidation of Si₀.₅₄Ge₀.₄₆ for Memory Device Applications
In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si₀.₅₄Ge₀.₄₆ films. In dry oxidation, Ge was rejected from the growing ...
Fabrication of Highly Ordered Nanoparticle Arrays Using Thin Porous Alumina Masks
Highly ordered nanoparticle arrays have been successfully fabricated by our group recently using ultra-thin porous alumina membranes as masks in the evaporation process. The sizes of the nanoparticles can be adjusted from ...
Observation of Joule Heating-Assisted Electromigration Failure Mechanisms for Dual Damascene Cu/SiO₂ Interconnects
Failure mechanisms observed in electromigration (EM) stressed dual damascene Cu/SiO₂ interconnects trees were studied and simulated. Failure sites with âmelt patch’ or âcrater’ are common for test structures in the top ...
Reliability of Multi-Terminal Copper Dual-Damascene Interconnect Trees
Electromigration tests on different Cu dual-damascene interconnect tree structures consisting of various numbers of straight via-to-via lines connected at the common middle terminal have been carried out. Like Al-based ...
Charge Storage Mechanism and Size Control of Germanium Nanocrystals in a Tri-layer Insulator Structure of a MIS Memory Device
A method of synthesizing and controlling the size of germanium nanocrystals is developed. A tri-layer metal-insulator-semiconductor (MIS) memory device structure comprising of a thin (~5nm) silicon dioxide (SiO₂) ...
The interfacial reaction of Ni on (100) Si₁âxGex (x=0, 0.25) and (111) Ge
The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, ...