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Micro Raman Spectroscopy of Annealed Erbium Implanted GaN
Wurtzite GaN epilayers grown by metal organic chemical vapor deposition on sapphire substrates were subsequently ion implanted with Er to a dose of 5×10¹⁵ cm⁻². The implanted samples were annealed in nitrogen atmosphere ...
GaN Nanopore Arrays: Fabrication and Characterization
GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...
Optically pumped InxGa₁âxN/InyGa₁âyN multiple quantum well vertical cavity surface emitting laser operating at room temperature.
Room temperature vertical cavity lasing at the wavelength of 433nm has been successfully realized in InxGa₁âxN/InyGa₁âyN multiple quantum well without Bragg mirrors under photo-excitation. At high excitation intensity, ...
Plastic Relaxation In Single InᵡGa₁âᵡN/GaN Epilayers Grown On Sapphire
Plastic relaxation was observed in InᵡGa₁âᵡN/GaN epilayers grown on c-plane sapphire substrates. The relaxation obeys the universal hyperbolic relation between the strain and the reciprocal of the layer ...
Structural analysis of metalorganic chemical vapor deposited AlN nucleation layers on Si (111)
AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers grown by MOCVD on Si (111) substrates with trimethylaluminium pre-treatments have been ...