Now showing items 1-3 of 3
Fatal Void Size Comparisons in Via-Below and Via-Above Cu Dual-Damascene Interconnects
The median-times-to-failure (t₅₀’s) for straight dual-damascene via-terminated copper interconnect structures, tested under the same conditions, depend on whether the vias connect down to underlaying leads ...
Mortality Dependence of Cu Dual Damascene Interconnects on Adjacent Segments
Electromigration experiments have been carried out on straight interconnects that have single vias at each end, and are divided into two segments by a via in the center ("dotted-I" structures). For dotted-i structures in ...
Effect of Pt on agglomeration and Ge out-diffusion in Ni(Pt) germanosilicide
The effect of Ni and Ni(Pt) alloy with ~5 and 10 at. % Pt on the agglomeration and Ge out-diffusion in Nickel germanosilicide formed on Si₀.₇₅Ge₀.₂₅(100) has been studied. A ...