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Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on SiââxGex/Si virtual substrates
(2002-01)
We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Siâ.âGeâ.â virtual substrates. The poor interface between silicon dioxide (SiOâ) and the Ge channel ...
SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication
(2002-01)
In this work, we have developed two different fabrication processes for relaxed Si₁₋xGex-on-insulator (SGOI) substrates: (1) SGOI fabrication by etch-back approach, and (2) by "smart-cut" approach utilizing ...