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Poly-Si₁â‚‹xGex Film Growth for Ni Germanosilicided Metal Gate 

Yu, Hongpeng; Pey, Kin Leong; Choi, Wee Kiong; Fitzgerald, Eugene A.; Antoniadis, Dimitri A. (2005-01)
Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 ...

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AuthorAntoniadis, Dimitri A. (1)
Choi, Wee Kiong (1)
Fitzgerald, Eugene A. (1)
Pey, Kin Leong (1)
Yu, Hongpeng (1)Subject
complementary metal oxide semiconductor (1)
nickel (1)
poly-SiGe (1)
poly-silicon germanium (1)silica (1)... View MoreDate Issued2005 (1)Has File(s)Yes (1)

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