Search
Now showing items 1-1 of 1
High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD
(2005-01)
The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. ...