Search
Now showing items 1-4 of 4
Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Siâ‚â‚‹xGex/Si virtual substrates
(2002-01)
We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si₀.₃Ge₀.₇ virtual substrates. The poor interface between silicon dioxide (SiO₂) and the Ge channel ...
Si Industry at a Crossroads: New Materials or New Factories?
(2002-01)
Many trends in the silicon industry could be interpreted as the herald of the end of traditional Si scaling. If this premise holds, future performance and system-on-chip applications may not be reached with conventional ...
SiGe-On-Insulator (SGOI): Two Structures for CMOS Application
(2003-01)
Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance ...
High hole and electron mobilities using Strained Si/Strained Ge heterostructures
(2004-01)
PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for ...