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Mortality Dependence of Cu Dual Damascene Interconnects on Adjacent Segments
(2004-01)
Electromigration experiments have been carried out on straight interconnects that have single vias at each end, and are divided into two segments by a via in the center ("dotted-I" structures). For dotted-i structures in ...
Native Point Defects in yttria as a High-Dielectric-Constant Gate Oxide Material: A First-Principles Study
(2006-01)
Yttria (Y₂O₃) has become a
promising gate oxide material to replace silicon dioxide in metal-oxide-semiconductor (MOS) devices. The characterization of native point defect in Y₂O₃ is essential to understand the behavior ...
First-Principles Study of Point Defects in LaAlO₃
(2007-01)
In this study, the native point defects including oxygen vacancy and interstitial, metal (La, Al) vacancy and interstitial, and metal antisite in perovskite LAO are studied. Defect formation energies are studied as a ...
Charge Storage Effect in a Trilayer Structure Comprising Germanium Nanocrystals
(2002-01)
A metal-insulator-semiconductor (MIS) device with a trilayer insulator structure consisting of sputtered SiO₂ (~50nm)/evaporated pure germanium (Ge) layer (2.4nm)/rapid thermal oxide (~5nm) was fabricated on a p-type ...
Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix
(2007-01)
Germanium (Ge) nanocrystals had been synthesized by annealing co-sputtered SiO₂-Ge in N₂ and/or forming gas (90% N₂ + 10% H₂) at temperatures ranging from 700 to 1000°C from 15 to 60 min. It was concluded that the annealing ...
Dependence of nanocrystal formation and charge storage/retention performance of a tri-layer memory structure on germanium concentration and tunnel oxide thickness
(2004-01)
The effect of germanium (Ge) concentration and the rapid thermal oxide (RTO) layer thickness on the nanocrystal formation and charge storage/retention capability of a trilayer metal-insulator-semiconductor device was ...
Effect of Pt on agglomeration and Ge out-diffusion in Ni(Pt) germanosilicide
(2004-01)
The effect of Ni and Ni(Pt) alloy with ~5 and 10 at. % Pt on the agglomeration and Ge out-diffusion in Nickel germanosilicide formed on Si₀.₇₅Ge₀.₂₅(100) has been studied. A ...
Fatal Void Size Comparisons in Via-Below and Via-Above Cu Dual-Damascene Interconnects
(2004-01)
The median-times-to-failure (t₅₀’s) for straight dual-damascene via-terminated copper interconnect structures, tested under the same conditions, depend on whether the vias connect down to underlaying leads ...
Fabrication of Highly Ordered Nanoparticle Arrays Using Thin Porous Alumina Masks
(2003-01)
Highly ordered nanoparticle arrays have been successfully fabricated by our group recently using ultra-thin porous alumina membranes as masks in the evaporation process. The sizes of the nanoparticles can be adjusted from ...
TEM Study on the Evolution of Ge Nanocrystals in Si Oxide Matrix as a Function of Ge Concentration and the Si Reduction Process
(2006-01)
Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiO₂) system have been studied based on the Ge content of co-sputtered Ge-SiO₂ films using transmission electron microscopy (TEM) and X-ray ...