Now showing items 11-13 of 13
The Influence of Adjacent Segment on the Reliability of Cu Dual Damascene Interconnects
Three terminal âdotted-I’ interconnect structures, with vias at both ends and an additional via in the middle, were tested under various test conditions. Mortalities (failures) were found in right segments with jL value ...
Workfunction Tuning of n-Channel MOSFETs Using Interfacial Yttrium Layer in Fully Silicided Nickel Gate
Continual scaling of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-45 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...
The interfacial reaction of Ni on (100) Si₁âxGex (x=0, 0.25) and (111) Ge
The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, ...