Search
Now showing items 1-2 of 2
Dependence of nanocrystal formation and charge storage/retention performance of a tri-layer memory structure on germanium concentration and tunnel oxide thickness
(2004-01)
The effect of germanium (Ge) concentration and the rapid thermal oxide (RTO) layer thickness on the nanocrystal formation and charge storage/retention capability of a trilayer metal-insulator-semiconductor device was ...
Charge storage in nanocrystal systems: Role of defects?
(2004-01)
Wet thermal oxidations of polycrystalline Si₀.₅₄Ge₀.₄₆ films at 600°C for 30 and 50 min were carried out. A stable mixed oxide was obtained for films that were oxidized for 50 min. ...