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Fatal Void Size Comparisons in Via-Below and Via-Above Cu Dual-Damascene Interconnects
The median-times-to-failure (t₅₀’s) for straight dual-damascene via-terminated copper interconnect structures, tested under the same conditions, depend on whether the vias connect down to underlaying leads ...
Growth and Properties of (001)-oriented Pb(Zr₀.₅₂Ti₀.₄₈)O₃/LaNiO₃ Films on Si(001) Substrates with TiN Buffer Layers
Pulsed laser deposition has been used to grow Pb(Zr₀.₅₂Ti₀.₄₈)O₃ (PZT)/LaNiO₃ (LNO) heterostructures with restricted crystallographic orientations on bare Si(001) and SiO₂-coated Si(001) substrates, using TiN buffer layers. ...
Mortality Dependence of Cu Dual Damascene Interconnects on Adjacent Segments
Electromigration experiments have been carried out on straight interconnects that have single vias at each end, and are divided into two segments by a via in the center ("dotted-I" structures). For dotted-i structures in ...
Structural analysis of metalorganic chemical vapor deposited AlN nucleation layers on Si (111)
AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers grown by MOCVD on Si (111) substrates with trimethylaluminium pre-treatments have been ...