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Fatal Void Size Comparisons in Via-Below and Via-Above Cu Dual-Damascene Interconnects
The median-times-to-failure (t₅₀’s) for straight dual-damascene via-terminated copper interconnect structures, tested under the same conditions, depend on whether the vias connect down to underlaying leads ...
Investigation of the Fundamental Reliability Unit for Cu Dual-Damascene Metallization
An investigation has been carried out to determine the fundamental reliability unit of copper dual-damascene metallization. Electromigration experiments have been carried out on straight via-to-via interconnects in the ...