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Formation of Nanocrystalline Germanium via Oxidation of Si₀.₅₄Ge₀.₄₆ for Memory Device Applications
In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si₀.₅₄Ge₀.₄₆ films. In dry oxidation, Ge was rejected from the growing ...
Charge Storage Mechanism and Size Control of Germanium Nanocrystals in a Tri-layer Insulator Structure of a MIS Memory Device
A method of synthesizing and controlling the size of germanium nanocrystals is developed. A tri-layer metal-insulator-semiconductor (MIS) memory device structure comprising of a thin (~5nm) silicon dioxide (SiO₂) ...