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Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epilayers Grown on sapphire
Graded InGaN buffers were employed to relax the strain arising from the lattice and thermal mismatch in GaN/InGaN epilayers grown on sapphire. An enhanced strain relaxation was observed in GaN grown on a stack of five InGaN ...
Laser Fabrication by Using Photonic Crystal
This paper involves the calculation for composition of different layer used in laser structure and the simulation of cavity, formed by creating air columns in the InGaAsP medium, for square lattice. The aim of this project ...
Evolution of AlN buffer layers on Silicon and the effect on the property of the expitaxial GaN film
The morphology evolution of high-temperature grown AlN nucleation layers on (111) silicon has been studied using atomic force microscopy (AFM). The structure and morphology of subsequently grown GaN film were characterized ...
GaN Based Nanomaterials Fabrication with Anodic Aluminium Oxide by MOCVD
A highly self-ordered hexagonal array of cylindrical pores has been fabricated by anodizing a thin film of Al on substrate and subsequent growth of GaN and InGaN in these nanoholes has been performed. This AAO template-based ...