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Effect of Oxygen on Ni-Silicided FUSI Metal Gate
(2006-01)
Continual evolution of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-65 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...
Workfunction Tuning of n-Channel MOSFETs Using Interfacial Yttrium Layer in Fully Silicided Nickel Gate
(2007-01)
Continual scaling of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-45 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...