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Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on SiââxGex/Si virtual substrates
(2002-01)
We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Siâ.âGeâ.â virtual substrates. The poor interface between silicon dioxide (SiOâ) and the Ge channel ...
MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels
(2003-01)
Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with ...