SiGe-On-Insulator (SGOI): Two Structures for CMOS Application
Author(s)Cheng, Zhiyuan; Jung, Jongwan; Lee, Minjoo L.; Nayfeh, Hasan; Pitera, Arthur J.; Hoyt, Judy L.; Fitzgerald, Eugene A.; Antoniadis, Dimitri A.; ... Show more Show less
Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance and CMOS process point of view. We have demonstrated both structures on SGOI, and have fabricated n-MOSFET’s and p-MOSFET’s on those two structures respectively. Device characteristics are presented. The devices show enhancement on both electron and hole mobilities.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
strained-Si, SiGe, SiGe-on-Insulator, SGOI, strained-Si on SGOI, SSOI, SOI, dual-channel, surface channel, MOSFET, mobility, bonding, etch-back