Optimal design of channel doping for fully depleted SOI MOSFETs

Author(s)
Ouma, Dennis Okumu
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Alternative title
Optimal design of channel doping for fully depleted silicon-on-insulator metal oxide semiconductor field effect transistors.
Advisor
Dimitri Antoniadis.
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M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582
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Description
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.
 
Includes bibliographical references (leaves 87-89).
 
Date issued
1995
URI
http://hdl.handle.net/1721.1/37032
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Publisher
Massachusetts Institute of Technology
Keywords
Electrical Engineering and Computer Science
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