Characterization of novel III-V semiconductor devices

Abstract

This thesis presents the characterization of tunnel junctions and tunnel-junction-coupled lasers. The reverse-biased leakage current in a tunnel junction can be exploited to tunnel electrons from the valence band of one active region to the conduction band of a second active region. Thus, tunnel-junction-coupled lasers are highly efficient as they allow electrons to stimulate the emission of photons in more than one active region. The electrical characterization of InGaAs/GaAs tunnel junctions is presented. This thesis also gives an overview of the electrical and optical behavior of single-stage lasers as well as two-stage lasers coupled by InGaAs/GaAs tunnel junctions. Telecommunication applications motivated the use of InAs quantum dots and InAsP quantum dashes in the active layer design to provide near-infrared emission.