Formation of Nanocrystalline Germanium via Oxidation of Si₀.₅₄Ge₀.₄₆ for Memory Device Applications
Author(s)Kan, Eric Win Hong; Leoy, C.C.; Choi, Wee Kiong; Chim, Wai Kin; Antoniadis, Dimitri A.; Fitzgerald, Eugene A.; ... Show more Show less
In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si₀.₅₄Ge₀.₄₆ films. In dry oxidation, Ge was rejected from the growing SiO₂ forming a Ge-rich polycrystalline layer. As for wet oxidation, Ge was incorporated into the oxide, forming a layer of mixed oxide, SixGe₁âxOy. Formation of nanocrystalline Ge was observed when the layer of SixGe₁âxOy was annealed in a N₂ ambient. We have fabricated a metal-insulator-semiconductor structure with nanocrystalline Ge embedded within the insulator layer to study its feasibility as a memory device.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
germanium nanocrystal, silicon-germanium, oxidation