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dc.contributor.authorChang, Choon Wai
dc.contributor.authorGan, C.L.
dc.contributor.authorThompson, Carl V.
dc.contributor.authorPey, Kin Leong
dc.contributor.authorChoi, Wee Kiong
dc.date.accessioned2003-11-24T21:03:56Z
dc.date.available2003-11-24T21:03:56Z
dc.date.issued2003-01
dc.identifier.urihttp://hdl.handle.net/1721.1/3727
dc.description.abstractFailure mechanisms observed in electromigration (EM) stressed dual damascene Cu/SiO₂ interconnects trees were studied and simulated. Failure sites with ‘melt patch’ or ‘crater’ are common for test structures in the top metal layer, though the occurrence of such failure modes probably depends on the passivation layer thickness. Interconnects that were EM stressed for a short time and then stressed with increasing current to induce Joule heating in the line had similar failure sites to lines that were stressed to failure under standard EM conditions. This shows that some failure mechanisms during EM could be assisted by Joule heating effect.en
dc.description.sponsorshipSingapore-MIT Alliance (SMA)en
dc.format.extent1016196 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.relation.ispartofseriesAdvanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subjectelectromigrationen
dc.subjectJoule heatingen
dc.subjectfailure mechanismen
dc.titleObservation of Joule Heating-Assisted Electromigration Failure Mechanisms for Dual Damascene Cu/SiO₂ Interconnectsen
dc.typeArticleen


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