The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor

Author(s)
Greenberg, David Ross
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Advisor
Jesús A. del Alamo.
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Description
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.
 
Includes bibliographical references (p. 135-140).
 
Date issued
1995
URI
http://hdl.handle.net/1721.1/37763
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Publisher
Massachusetts Institute of Technology
Keywords
Electrical Engineering and Computer Science
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