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dc.contributor.advisorThomas W. Eagar.en_US
dc.contributor.authorLiu, Jingwei, M. Eng. Massachusetts Institute of Technologyen_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Materials Science and Engineering.en_US
dc.date.accessioned2007-07-18T13:03:20Z
dc.date.available2007-07-18T13:03:20Z
dc.date.copyright2006en_US
dc.date.issued2006en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/37883
dc.descriptionThesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.en_US
dc.descriptionIncludes bibliographical references (leaves 98-102).en_US
dc.description.abstractMotivated by the super high electron mobility of Indium Antimonide (InSb), researchers have seen great potential to use this new material in high switching speed and low power transistors. In Dec, 2005, Intel and its partner, QinetiQ, Ltd, announced 85nm gate length enhancement and depletion mode InSb quantum well transistors. Such transistors can operate as high as 305GHz and power consumption is reduced by a factor of 10. In this thesis, the emerging InSb transistor technology is discussed in details. Given its superior performance, it may complement silicon transistor to extend Moore's law in the next decade. The prospect of InSb transistor is also compared with other nanotechnology transistors, such as carbon nanotube and silicon nanowire. Several potential markets are figured out, namely, microprocessor, low noise amplifier and millimeter wave device. Related patents are evaluated. It is found that most of the patents are held by Intel's partner, QinetiQ Ltd. and thus patents issue would not block the launch of products. A joint venture or strategy alliance model is proposed to reduce the risk of investment. In addition, a cost model is presented at the end. It is concluded that cheap silicon substrate and large enough production scale are two crucial factors for the commercialization success of InSb transistor technology.en_US
dc.description.statementofresponsibilityby Jingwei Liu.en_US
dc.format.extent102 leavesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectMaterials Science and Engineering.en_US
dc.titleAn evaluation of indium antimonide quantum well transistor technologyen_US
dc.title.alternativeEvaluation of InSb quantum well transistor technologyen_US
dc.typeThesisen_US
dc.description.degreeM.Eng.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Dept. of Materials Science and Engineering.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
dc.identifier.oclc127413332en_US


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