| dc.contributor.author | Jin, Lijuan | |
| dc.contributor.author | Pey, Kin Leong | |
| dc.contributor.author | Choi, Wee Kiong | |
| dc.contributor.author | Fitzgerald, Eugene A. | |
| dc.contributor.author | Antoniadis, Dimitri A. | |
| dc.contributor.author | Chi, D.Z. | |
| dc.date.accessioned | 2003-12-13T16:23:54Z | |
| dc.date.available | 2003-12-13T16:23:54Z | |
| dc.date.issued | 2004-01 | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/3825 | |
| dc.description.abstract | The effect of Ni and Ni(Pt) alloy with ~5 and 10 at. % Pt on the agglomeration and Ge out-diffusion in Nickel germanosilicide formed on Si₀.₇₅Ge₀.₂₅(100) has been studied. A remarkable improvement in the agglomeration behavior with increasing Pt atomic percentage is observed by sheet resistance measurements and scanning electron microscopy (SEM). In addition, x-ray diffraction (XRD) shows that only NiSiGe or Ni(Pt)SiGe phase exists from 400 to 800°C. However, Ge out-diffusion from the monogermanosilicide grains is obvious at 600°C and 700°C for Ni/SiGe and Ni(Pt)(Pt at.%~10%)/SiGe, respectively, evident by XRD and micro-Raman spectroscopy. The improved melting temperature of Ni(Pt)SiGe solution compared to that of NiSiGe is the likely reason of seeing better surface morphology and suppressing Ge out-diffusion of the germanosilicide grains observed. | en |
| dc.description.sponsorship | Singapore-MIT Alliance (SMA) | en |
| dc.format.extent | 1019837 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en_US | |
| dc.relation.ispartofseries | Advanced Materials for Micro- and Nano-Systems (AMMNS); | |
| dc.subject | agglomeration | en |
| dc.subject | Ge out-diffusion | en |
| dc.title | Effect of Pt on agglomeration and Ge out-diffusion in Ni(Pt) germanosilicide | en |
| dc.type | Article | en |
