Growth and Properties of (001)-oriented Pb(Zr₀.₅₂Ti₀.₄₈)O₃/LaNiO₃ Films on Si(001) Substrates with TiN Buffer Layers

dc.contributor.author	Zhu, Tie-Jun
dc.contributor.author	Lu, Li
dc.contributor.author	Thompson, Carl V.
dc.date.accessioned	2003-12-13T16:43:24Z
dc.date.available	2003-12-13T16:43:24Z
dc.date.issued	2004-01
dc.identifier.uri	http://hdl.handle.net/1721.1/3829
dc.description.abstract	Pulsed laser deposition has been used to grow Pb(Zr₀.₅₂Ti₀.₄₈)O₃ (PZT)/LaNiO₃ (LNO) heterostructures with restricted crystallographic orientations on bare Si(001) and SiO₂-coated Si(001) substrates, using TiN buffer layers. The effect of background gas pressure on orientation of the thin films was investigated in detail. XRD analyses showed that under optimized conditions, (001)-oriented PZT/LNO/TiN heterostructures could be grown on either Si(001) or SiO₂/Si substrates. The (001)-textured PZT films had remnant polarizations as high as 23µC/cm², and also had a low coercive field. Up to 10¹⁰ switching cycles have been achieved in these PZT films.	en
dc.description.sponsorship	Singapore-MIT Alliance (SMA)	en
dc.format.extent	372225 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.relation.ispartofseries	Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject	pulsed laser deposition	en
dc.subject	ferroelectric thin films	en
dc.subject	PZT	en
dc.subject	crystallographic orientation	en
dc.subject	ferroelectric properties	en
dc.title	Growth and Properties of (001)-oriented Pb(Zr₀.₅₂Ti₀.₄₈)O₃/LaNiO₃ Films on Si(001) Substrates with TiN Buffer Layers	en
dc.type	Article	en