A 77GHz power amplifier in silicon germanium BiCMOS technology

Author(s)
Nguyen, Khoa Minh
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Alternative title
Seventy-seven gigahertz power amplifier in silicon germanium bipolar complementary metal oxide semiconductor technology
Other Contributors
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Advisor
Charles G. Sodini.
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M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582
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Abstract
The allocation of millimeter-wave frequencies has opened new possibilities for imaging applications such as vehicular radar and concealed weapons detection. Recent advances in silicon processes offer a new means of implementing cost-effective millimeter-wave integrated circuits, a field previously dominated by III-V semiconductors. By moving towards silicon, millimeter-wave circuits can achieve new levels of integration that were not possible when designed with III-V semiconductors. This thesis discusses the challenges and design of a 2-stage cascoded class-AB 77GHz power amplifier that could be used for imaging applications. Simulation results show a maximum output power of 20dBm, 26dB gain, and a maximum power-added efficiency (PAE) of 16%.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2006.
 
Includes bibliographical references (leaves 53-54).
 
Date issued
2006
URI
http://hdl.handle.net/1721.1/38306
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Publisher
Massachusetts Institute of Technology
Keywords
Electrical Engineering and Computer Science.
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