High hole and electron mobilities using Strained Si/Strained Ge heterostructures

dc.contributor.author	Gupta, Saurabh
dc.contributor.author	Lee, Minjoo L.
dc.contributor.author	Leitz, Christopher W.
dc.contributor.author	Fitzgerald, Eugene A.
dc.date.accessioned	2003-12-13T16:54:41Z
dc.date.available	2003-12-13T16:54:41Z
dc.date.issued	2004-01
dc.identifier.uri	http://hdl.handle.net/1721.1/3830
dc.description.abstract	PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for both electrons and holes. However, germanium interdiffusion from the germanium rich buried layer into the underlying buffer layer could potentially reduce the hole mobility enhancements.	en
dc.description.sponsorship	Singapore-MIT Alliance (SMA)	en
dc.format.extent	308344 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.relation.ispartofseries	Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject	strained-Ge	en
dc.subject	SiGe	en
dc.subject	germanium	en
dc.subject	MOSFET	en
dc.subject	mobility	en
dc.subject	strained-Si	en
dc.subject	pMOSFET	en
dc.subject	nMOSFET	en
dc.subject	germanium-diffusion	en
dc.title	High hole and electron mobilities using Strained Si/Strained Ge heterostructures	en
dc.type	Article	en