Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm
Author(s)Gomez, Leonardo, Ph. D. Massachusetts Institute of Technology
Electron transport in UTB fully depleted n-MOSFETS fabricated on SSDOI with body thickness ranging from 22nm to 25 nm
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Judy L. Hoyt.
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The electron effective mobility in ultrathin-body (UTB) n-MOSFETs fabricated on Ge-free 30% strained-Si directly on insulator (SSDOI) is mapped as the body thickness is scaled. Effective mobility and device body thickness were extracted using current-voltage and gate-to-channel capacitance-voltage measurements as well as cross section transmission electron microscopy. Devices with body thicknesses ranging from 2 nm to 25 nm are studied. Significant electron mobility enhancements ([approx] 1.8x) are observed in SSDOI compared to unstrained SOI for body thicknesses above 3.5 nm. The mobility exhibits a sharp drop as the body thickness is scaled below 3.5 nm.
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2007.Includes bibliographical references (leaves 49-53).
DepartmentMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology
Electrical Engineering and Computer Science.