InGaAsN/GaAs Quantum-well Laser Diodes
Author(s)Wang, S.Z.; Yoon, Soon Fatt
GaAs-based InGaAsN/GaAs quantum well is found to be very sensitive to growth conditions and ex-situ annealing processes. Annealing could drastically increase the optical quality of GaAs-based InGaAsN/GaAs quantum well. As an end of this paper, some results on InGaAsN/GaAsN/AlGaAs laser diodes are also presented.
Innovation in Manufacturing Systems and Technology (IMST);
InGaAsN/GaAs, quantum well, molecular beam epitaxy, laser diode