Show simple item record

dc.contributor.authorHeng, C.L.
dc.contributor.authorChoi, Wee Kiong
dc.contributor.authorChim, Wai Kin
dc.contributor.authorTeo, L.W.
dc.contributor.authorHo, Vincent
dc.contributor.authorTjiu, W.W.
dc.contributor.authorAntoniadis, Dimitri A.
dc.date.accessioned2003-12-20T19:03:35Z
dc.date.available2003-12-20T19:03:35Z
dc.date.issued2002-01
dc.identifier.urihttp://hdl.handle.net/1721.1/3969
dc.description.abstractA metal-insulator-semiconductor (MIS) device with a trilayer insulator structure consisting of sputtered SiO₂ (~50nm)/evaporated pure germanium (Ge) layer (2.4nm)/rapid thermal oxide (~5nm) was fabricated on a p-type Si substrate. The MIS device was rapid thermal annealed at 1000°C. Capacitance-voltage (C-V) measurements showed that, after rapid thermal annealing at 1000°C for 300s in Ar, the trilayer device exhibited charge storage property. The charge storage effect was not observed in a device with a bilayer structure without the Ge middle layer. With increasing rapid thermal annealing time from 0 to 400s, the width of the C-V hysteresis of the trilayer device increased significantly from 1.5V to ~11V, indicating that the charge storage capability was enhanced with increasing annealing time. High-resolution transmission electron microscopy results confirmed that with increasing annealing time, the 2.4nm amorphous middle Ge layer crystallized gradually. More Ge nanocrystals were formed and the crystallinity of the Ge layer improved as the annealing time was increased. When the measurement temperature was increased from –50°C to 150°C, the width of the hysteresis of the MIS device reduced from ~10V to ~6V. This means that the charge storage capability of the trilayer structure decreases with increasing measurement temperature. This is due to the fact that the leakage current in the trilayer structure increases with increasing measurement temperature.en
dc.description.sponsorshipSingapore-MIT Alliance (SMA)en
dc.format.extent354001 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.relation.ispartofseriesAdvanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subjectmetal-insulator-semiconductor devicesen
dc.subjectsputtered SiO2en
dc.subjectevaporated pure germaniumen
dc.subjectcharge storage effecten
dc.subjecttrilayer structureen
dc.titleCharge Storage Effect in a Trilayer Structure Comprising Germanium Nanocrystalsen
dc.typeArticleen


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record