Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on SiââxGex/Si virtual substrates
Author(s)Lee, Minjoo L.; Leitz, Christopher W.; Cheng, Zhiyuan; Antoniadis, Dimitri A.; Fitzgerald, Eugene A.
We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Siâ.âGeâ.â virtual substrates. The poor interface between silicon dioxide (SiOâ) and the Ge channel was eliminated by capping the strained Ge layer with a relaxed, epitaxial silicon surface layer grown at 400° C. Ge p-MOSFETs fabricated from this structure show a hole mobility enhancement of nearly 8 times that of co-processed bulk Si devices, and the Ge MOSFETs have a peak effective mobility of 1160 cmÂ²/V-s. These MOSFETs demonstrate the possibility of creating a surface channel enhancement mode MOSFET with buried channel-like transport characteristics.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
strained-Ge, SiGe, germanium, MOSFET, mobility, strained-Si, pMOSFET