Molecular Beam Epitaxy of Ga(In)AsN/GaAs Quantum Wells towards 1.3µm and 1.55µm
Author(s)Wang, S.Z.; Yoon, Soon Fatt; Ng, Teck Khim; Loke, W.K.; Fan, W.J.
In this article, we report an attempt of extending the InGaAsN materials towards 1.3µm and 1.55µm wavelength. All these InGaAsN samples are grown in a plasma-assisted solid-source molecular-beam epitaxy (SS-MBE) system. Our experiments revealed that the nitrides could be grown with both direct nitrogen beam and dispersive nitrogen. The nitrogen incorporation rate could be reduced by the presence of indium flux. The interaction between nitrogen and indium might lead to 3D growth mode and growth dynamics. It is proved that the increasing growth rate reduces the nitrogen incorporation efficiency. The data for nitrogen sticking coefficient are somewhat contradictive. The growth with dispersive nitrogen source causes the improvement of material quality. Fixed indium flux is a better way for the wavelength control. Also, we report some growth optimization work for better PL property and the annealing effect on the samples. Literature is sometimes reviewed for comparison.
Innovation in Manufacturing Systems and Technology (IMST);
In(Ga)AsN/GaAs, quantum wells, molecular beam epitaxy, 1.3µm, 1.55µm