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dc.contributorJackson, Keith M. (Keith Matthew)en_US
dc.date.accessioned2004-03-02T18:26:24Z
dc.date.available2004-03-02T18:26:24Z
dc.date.copyright2001en_US
dc.date.issued2001en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/4111
dc.descriptionSupervised by Dimitri A. Antoniadis and Henry I. Smith.en_US
dc.descriptionAlso issued as Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2001.en_US
dc.descriptionIncludes bibliographical references.en_US
dc.description.statementofresponsibilityby Keith M. Jackson.en_US
dc.format.extent142 p.en_US
dc.format.extent8370532 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.relation.ispartofseriesTechnical report (Massachusetts Institute of Technology. Research Laboratory of Electronics) ; 653.en_US
dc.titleOptimal MOSFET design for low temperature operationen_US
dc.title.alternativeOptimal metal oxide semiconductor field-effect transistors design for low temperature operationen_US


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