| dc.contributor.advisor | Charles G. Sodini. | en_US |
| dc.contributor.author | Jayaraman, Rajsekhar | en_US |
| dc.contributor.other | Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. | en_US |
| dc.date.accessioned | 2008-05-19T15:56:46Z | |
| dc.date.available | 2008-05-19T15:56:46Z | |
| dc.date.copyright | 1988 | en_US |
| dc.date.issued | 1988 | en_US |
| dc.identifier.uri | http://hdl.handle.net/1721.1/41582 | |
| dc.description | Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1988. | en_US |
| dc.description | Bibliography: leaves 164-178. | en_US |
| dc.description.statementofresponsibility | by Rajsekhar Jayaraman. | en_US |
| dc.format.extent | 193 leaves | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | Massachusetts Institute of Technology | en_US |
| dc.rights | M.I.T. theses are protected by
copyright. They may be viewed from this source for any purpose, but
reproduction or distribution in any format is prohibited without written
permission. See provided URL for inquiries about permission. | en_US |
| dc.rights.uri | http://dspace.mit.edu/handle/1721.1/7582 | en_US |
| dc.subject | Electrical Engineering and Computer Science. | en_US |
| dc.title | Reliability and 1/f noise properties of MOSFETs with nitrided oxide gate dielectrics | en_US |
| dc.type | Thesis | en_US |
| dc.description.degree | Ph.D. | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | |
| dc.identifier.oclc | 18969291 | en_US |
