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dc.contributor.advisorMartin F. Schlecht.en_US
dc.contributor.authorBernstein, Joseph Barryen_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2008-09-03T14:35:52Z
dc.date.available2008-09-03T14:35:52Z
dc.date.copyright1986en_US
dc.date.issued1986en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/42101
dc.descriptionThesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1986.en_US
dc.descriptionMICROFICHE COPY AVAILABLE IN ARCHIVES AND ENGINEERINGen_US
dc.descriptionBibliography: leaf 76.en_US
dc.description.statementofresponsibilityby Joseph Barry Bernstein.en_US
dc.format.extent87 leavesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleDesign and fabrication of a vertical power MOSFET with an integral turn-off driveren_US
dc.typeThesisen_US
dc.description.degreeM.S.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc15688096en_US


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