Show simple item record

dc.contributor.advisorCaroline A. Ross.en_US
dc.contributor.authorNg, Bryanen_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Materials Science and Engineering.en_US
dc.date.accessioned2009-04-29T17:35:25Z
dc.date.available2009-04-29T17:35:25Z
dc.date.copyright2008en_US
dc.date.issued2008en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/45395
dc.descriptionThesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2008.en_US
dc.descriptionIncludes bibliographical references.en_US
dc.description.abstractPatterned pseudo spin-valve rings show great promise for device applications due to their non-volatility and variety of stable magnetic states. However, the magnetic reversal of these elements under an applied field is complex due to the magnetostatic coupling between the two ferromagnetic layers. Elliptical rings are electrically probed using highly symmetric Wheatstone bridges in conjunction with traditional four-point electrical measurements and micromagnetic simulations. New insight into domain wall nucleation and propagation events are elucidated. The resulting behavior is found to yield large signals at very low fields, making these devices ideal for device applications in data storage and computer logic. 360° domain walls are found to be extremely stable until fields as high as 10000e, but are positionally uncontrollable in elliptical rings. Rhombic rings were investigated as a geometry that can nucleate, propagate and pin domain walls more easily. Measurements and simulations confirm that the same reversal mechanisms exist and domain walls are more systematically positioned. The control over 3600 domain walls is valuable since reversals can occur without nucleation by decoupling the wall into a reverse domain. As a result, rhombic rings are useful as devices that can perform device functions at extremely low fields.en_US
dc.description.statementofresponsibilityby Bryan Ng.en_US
dc.format.extent96 p.en_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectMaterials Science and Engineering.en_US
dc.titleUnderstanding magnetic field reversal mechanisms in mesoscopic magnetic multilayer ring structuresen_US
dc.typeThesisen_US
dc.description.degreeM.Eng.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
dc.identifier.oclc317404502en_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record