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Analog to digital converters for CMOS imagers

Author(s)
Dacy, Susan (Susan Mary), 1975-
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Alternative title
A/D converters for CMOS imagers
Other Contributors
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Advisor
Charles Sodini and Marc Loinaz.
Terms of use
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582
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Abstract
A/D converters for single chip CMOS imagers have often been designed using the column-parallel approach, employing a slow A/D converter for each column of the sensor array. This thesis investigates a serial approach utilizing a single fast A/D converter to process all of the imager pixels. If power scales linearly with frequency in a given A/D architecture, power dissipation for the two approaches should be comparable. However, the serial approach should occupy less area since only the cost of one A/D converter is incurred. A figure of merit 1/power*area is introduced to verify this theory by comparing previously reported A/D approaches after appropriate technology, speed, and supply scaling. Camera system specifications require a single serial A/D converter to have 10b resolution at a 3MHz sampling rate for a CIF (352x288) imager array running at 30 frames/second Area minimization, power minimization, and the ability to build the A/D in a standard CMOS process are extremely important for consumer product applications. A single slope A/D architecture with a subnanosecond time digitizer shows promise for optimizing figure of merit over pipelined and folding interpolating approaches. This work focuses on the design issues of the 3MHz single-slope based A/D converter. Architectures appropriate for extending this A/D converter to 12MHz for four times CIF image arrays (704x576) are discussed. The 3MHz converter was designed, simulated, and laid out in a 0.35um CMOS technology. At 3.3V supply, 25°C and nominal process conditions, the converter dissipates 29 mW while occupying 0.3 mm2 . A 12MHz trislope extension of this converter is estimated to dissipate 37 mW in 0.4 mm2.
Description
Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.
 
Includes bibliographical references (leaves 80-82).
 
Date issued
1998
URI
http://hdl.handle.net/1721.1/46276
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Publisher
Massachusetts Institute of Technology
Keywords
Electrical Engineering and Computer Science.

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