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Near room temperature lithographically processed metal-oxide transistors

Author(s)
Tang, Hui, M. Eng. Massachusetts Institute of Technology
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Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Advisor
Vladimir Bulovic.
Terms of use
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582
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Abstract
A fully lithographic process at near-room-temperature was developed for the purpose of fabricating transistors based on metal-oxide channel materials. The combination of indium tin oxide (ITO) as the source/drain electrodes, zinc indium oxide (ZIO) as the semiconducting channel, and parylene as the dielectric was used to demonstrate the feasibility of such a low temperature lithographic process. This low processing temperature, roughly 150 C, enables the use of unconventional substrates such as glass or plastics, and can therefore simplify the fabrication of devices for low-cost, large-area electronics.
Description
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.
 
Includes bibliographical references (p. 75-76).
 
Date issued
2008
URI
http://hdl.handle.net/1721.1/46524
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Publisher
Massachusetts Institute of Technology
Keywords
Electrical Engineering and Computer Science.

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