Near room temperature lithographically processed metal-oxide transistors
Author(s)Tang, Hui, M. Eng. Massachusetts Institute of Technology
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
MetadataShow full item record
A fully lithographic process at near-room-temperature was developed for the purpose of fabricating transistors based on metal-oxide channel materials. The combination of indium tin oxide (ITO) as the source/drain electrodes, zinc indium oxide (ZIO) as the semiconducting channel, and parylene as the dielectric was used to demonstrate the feasibility of such a low temperature lithographic process. This low processing temperature, roughly 150 C, enables the use of unconventional substrates such as glass or plastics, and can therefore simplify the fabrication of devices for low-cost, large-area electronics.
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.Includes bibliographical references (p. 75-76).
DepartmentMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology
Electrical Engineering and Computer Science.