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dc.contributor.advisorDimitri A. Antoniadis.en_US
dc.contributor.authorNayfeh, Hasan M. (Hasan Munir), 1974-en_US
dc.date.accessioned2009-10-01T15:16:45Z
dc.date.available2009-10-01T15:16:45Z
dc.date.copyright1998en_US
dc.date.issued1998en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/47504
dc.descriptionThesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.en_US
dc.descriptionIncludes bibliographical references (leaves 83-86).en_US
dc.description.statementofresponsibilityby Hasan M. Nayfeh.en_US
dc.format.extent135 leavesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Scienceen_US
dc.titleCorrelation of silicon microroughness with electrical parameters of SOI-AS (silicon-on-insulator with active substrate)en_US
dc.title.alternativeCorrelation of silicon microroughness on electrical parameters of SOI-AS (silicon-on-insulator with active substrate)en_US
dc.typeThesisen_US
dc.description.degreeM.S.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc40295239en_US


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