dc.contributor.advisor | Dimitri A. Antoniadis. | en_US |
dc.contributor.author | Nayfeh, Hasan M. (Hasan Munir), 1974- | en_US |
dc.date.accessioned | 2009-10-01T15:16:45Z | |
dc.date.available | 2009-10-01T15:16:45Z | |
dc.date.copyright | 1998 | en_US |
dc.date.issued | 1998 | en_US |
dc.identifier.uri | http://hdl.handle.net/1721.1/47504 | |
dc.description | Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998. | en_US |
dc.description | Includes bibliographical references (leaves 83-86). | en_US |
dc.description.statementofresponsibility | by Hasan M. Nayfeh. | en_US |
dc.format.extent | 135 leaves | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Massachusetts Institute of Technology | en_US |
dc.rights | M.I.T. theses are protected by
copyright. They may be viewed from this source for any purpose, but
reproduction or distribution in any format is prohibited without written
permission. See provided URL for inquiries about permission. | en_US |
dc.rights.uri | http://dspace.mit.edu/handle/1721.1/7582 | en_US |
dc.subject | Electrical Engineering and Computer Science | en_US |
dc.title | Correlation of silicon microroughness with electrical parameters of SOI-AS (silicon-on-insulator with active substrate) | en_US |
dc.title.alternative | Correlation of silicon microroughness on electrical parameters of SOI-AS (silicon-on-insulator with active substrate) | en_US |
dc.type | Thesis | en_US |
dc.description.degree | M.S. | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | |
dc.identifier.oclc | 40295239 | en_US |