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Physics of high-frequency operation in silicon MOSFETs

dc.contributor.advisorJesús del Alamo.en_US
dc.contributor.authorChang, Richard T. (Richard Tzewei), 1975-en_US
dc.date.accessioned2009-10-01T15:23:03Z
dc.date.available2009-10-01T15:23:03Z
dc.date.copyright1998en_US
dc.date.issued1998en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/47571
dc.descriptionThesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.en_US
dc.descriptionIncludes bibliographical references (leaves 66-68).en_US
dc.description.statementofresponsibilityby Richard T. Chang.en_US
dc.format.extent68 leavesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Scienceen_US
dc.titlePhysics of high-frequency operation in silicon MOSFETsen_US
dc.typeThesisen_US
dc.description.degreeM.Eng.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc41435985en_US


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