Now showing items 1-4 of 4
Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs
(Institute of Electrical and Electronics Engineers, 2009-08)
The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate ...
Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications
(Institute of Electrical and Electronics Engineers, 2009-11)
This letter describes a gate-first AlGaN/GaN high-electron mobility transistor (HEMT) with a W/high-k dielectric gate stack. In this new fabrication technology, the gate stack is deposited before the ohmic contacts, and ...
N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology
(Institute of Electrical and Electronics Engineers, 2009-01)
We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier ...
A model for the critical voltage for electrical degradation of GaN high electron mobility transistors
(Institute of Electrical and Electronics Engineers, 2008-03)
We have found that there is a critical drain-to-gate voltage beyond which GaN high-electron mobility transistors start to degrade in electrical-stress experiments. The critical voltage depends on the detailed voltage biasing ...