Now showing items 11729-11748 of 34506

    • Gamete Formation Resets the Aging Clock in Yeast 

      Unal, Elcin; Amon, Angelika B (Cold Spring Harbor Laboratory, 2011-09)
      Gametogenesis is a process whereby a germ cell differentiates into haploid gametes. We found that, in budding yeast, replicatively aged cells remove age-induced cellular damage during gametogenesis. Importantly, gametes ...
    • Gametogenesis Eliminates Age-Induced Cellular Damage and Resets Life Span in Yeast 

      Kinde, B.; Amon, Angelika B.; Unal, Elcin (American Association for the Advancement of Science (AAAS), 2011-06)
      Eukaryotic organisms age, yet detrimental age-associated traits are not passed on to progeny. How life span is reset from one generation to the next is not known. We show that in budding yeast resetting of life span occurs ...
    • Gamma and beta bursts during working memory readout suggest roles in its volitional control 

      Herman, Pawel; Lundqvist, Lars Mikael; Warden, Melissa; Brincat, Scott Louis; Miller, Earl K (Nature Publishing Group, 2018-01)
      Working memory (WM) activity is not as stationary or sustained as previously thought. There are brief bursts of gamma (~50-120 Hz) and beta (~20-35 Hz) oscillations, the former linked to stimulus information in spiking. ...
    • Gamma and Beta Bursts Underlie Working Memory 

      Herman, Pawel; Lundqvist, Lars Mikael; Rose, Jonas; Brincat, Scott Louis; Buschman, Timothy J; e.a. (Elsevier/Cell Press, 2016-03)
      Working memory is thought to result from sustained neuron spiking. However, computational models suggest complex dynamics with discrete oscillatory bursts. We analyzed local field potential (LFP) and spiking from the ...
    • Gamma frequency entrainment attenuates amyloid load and modifies microglia 

      Iaccarino, Hannah Frances; Singer, Annabelle; Martorell, Anthony; Rudenko, Andrii; Gao, Fan; e.a. (Nature Publishing Group, 2016-12)
      Changes in gamma oscillations (20-50 Hz) have been observed in several neurological disorders. However, the relationship between gamma oscillations and cellular pathologies is unclear. Here we show reduced, behaviourally ...
    • Gamma radiation effects in amorphous silicon and silicon nitride photonic devices 

      Du, Qingyang; Huang, Yizhong; Ogbuu, Okechukwu; Zhang, Wei; Li, Junying; e.a. (Optical Society of America, 2017-01)
      Understanding radiation damage is of significant importance for devices operating in radiation-harsh environments. In this Letter, we present a systematic study on gamma radiation effects in amorphous silicon and silicon ...
    • Gamma-Glutamyltransferase: A Predictive Biomarker of Cellular Antioxidant Inadequacy and Disease Risk 

      Koenig, Gerald; Seneff, Stephanie (Hindawi Publishing Corporation, 2015)
      Gamma-glutamyltransferase (GGT) is a well-established serum marker for alcohol-related liver disease. However, GGT’s predictive utility applies well beyond liver disease: elevated GGT is linked to increased risk to a ...
    • Gamma-glutamyltranspeptidase expression by Helicobacter saguini, an enterohepatic Helicobacter species isolated from cotton top tamarins with chronic colitis 

      Mannion, Anthony; Shen, Zeli; Feng, Yan; Artim, Stephen C.; Ravindra, Kodihalli; e.a. (Wiley, 2018-11-14)
      Background: Helicobacter saguini is a novel enterohepatic Helicobacter species isolated from captive cotton top tamarins with chronic colitis and colon cancer. Monoassociated H. saguini infection in gnotobiotic IL-10 −/− ...
    • Gamma-induced background in the KATRIN main spectrometer 

      Altenmüller, K.; Arenz, M.; Baek, W.-J.; Beck, M.; Beglarian, A.; e.a. (Springer Science and Business Media LLC, 2019-09)
      The KATRIN experiment aims to measure the effective electron antineutrino mass mν¯e with a sensitivity of 0.2eV/c2 using a gaseous tritium source combined with the MAC-E filter technique. A low background rate is crucial ...
    • GAMMA-RAY LUMINOSITY AND PHOTON INDEX EVOLUTION OF FSRQ BLAZARS AND CONTRIBUTION TO THE GAMMA-RAY BACKGROUND 

      Singal, J.; Petrosian, V.; Ko, Allan (IOP Publishing, 2014-04)
      We present the redshift evolutions and distributions of the gamma-ray luminosity and photon spectral index of flat spectrum radio quasar (FSRQ) type blazars, using non-parametric methods to obtain the evolutions and ...
    • Gamma-Rhythmic Gain Modulation 

      Ni, Jianguang; Wunderle, Thomas; Lewis, Christopher Murphy; Desimone, Robert; Diester, Ilka; e.a. (Elsevier/Cell Press, 2016-09)
      Cognition requires the dynamic modulation of effective connectivity, i.e., the modulation of the postsynaptic neuronal response to a given input. If postsynaptic neurons are rhythmically active, this might entail rhythmic ...
    • GaN Nanowire n-MOSFET with 5 nm Channel Length for Applications in Digital Electronics 

      Chowdhury, Nadim; Antoniadis, Dimitri A.; Palacios, Tomas (Institute of Electrical and Electronics Engineers (IEEE), 2017-05)
      We study the performance of GaN nanowire n-MOSFETs (GaN-NW-nFETs) with a channel length, Lg = 5 nm based on fully ballistic quantum transport simulations. Our simulation results show high ION = 1137μA/μm and excellent ...
    • GaN power electronics 

      Lu, Bin; Piedra, Daniel; Palacios, Tomas (Institute of Electrical and Electronics Engineers (IEEE), 2010-12)
      Between 5 and 10% of the world's electricity is wasted as dissipated heat in the power electronic circuits needed, for example, in computer power supplies, motor drives or the power inverters of photovoltaic systems. This ...
    • GaN-on-Si technology, a new approach for advanced devices in energy and communications 

      Chung, J. W.; Ryu, Kevin K.; Palacios, Tomas (Institute of Electrical and Electronics Engineers (IEEE), 2010-11)
      The Si substrate of GaN-on-Si wafers offers new opportunities to increase the functionality and performance of nitride-based devices. This paper will review three examples of these new devices/systems. First, GaN-on-Si ...
    • GaN/Cu[subscript 2]O Heterojunctions for Photovoltaic Applications 

      Hering, K.P.; Kramm, B.; Meyer, B.K.; Brandt, Riley E.; Buonassisi, Tonio (Elsevier, 2014-01)
      Several growth methods were employed to investigate the photovoltaic behavior of GaN/Cu[subscript 2]O heterojunctions by depositing cuprous oxide thin films on top of gallium nitride templates. The templates consist of a ...
    • Gapped Domain Walls, Gapped Boundaries, and Topological Degeneracy 

      Lan, Tian; Wen, Xiao-Gang; Wang, Juven (American Physical Society, 2015-02)
      Gapped domain walls, as topological line defects between (2+1)D topologically ordered states, are examined. We provide simple criteria to determine the existence of gapped domain walls, which apply to both Abelian and ...
    • Gapped quantum liquids and topological order, stochastic local transformations and emergence of unitarity 

      Zeng, Bei; Wen, Xiao-Gang (American Physical Society, 2015-03)
      In this work, we present some new understanding of topological order, including three main aspects. (1) It was believed that classifying topological orders corresponds to classifying gapped quantum states. We show that ...
    • Gapped quantum phases for the S=1 spin chain with D2h symmetry 

      Liu, Zheng-Xin; Liu, Min; Wen, Xiao-Gang (American Physical Society, 2011-08)
      We study different quantum phases in integer spin systems with on-site D[subscript 2h]=D[subscript 2]⊗Z[subscript 2] and translation symmetry. We find four distinct nontrivial phases in S=1 spin chains despite the fact ...
    • Gapped spin liquid with Z[subscript 2] topological order for the kagome Heisenberg model 

      Mei, Jia-Wei; Chen, Ji-Yao; He, Huan; Wen, Xiao-Gang (American Physical Society, 2017-06)
      We apply the symmetric tensor network state (TNS) to study the nearest-neighbor spin-1/2 antiferromagnetic Heisenberg model on the kagome lattice. Our method keeps track of the global and gauge symmetries in the TNS update ...
    • Gapped symmetry preserving surface state for the electron topological insulator 

      Wang, Chong; Potter, Andrew C.; Todadri, Senthil (American Physical Society, 2013-09)
      It is well known that the three-dimensional (3D) electronic topological insulator (TI) with charge-conservation and time-reversal symmetry cannot have a trivial insulating surface that preserves symmetry. It is often ...