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dc.contributor.advisorMarkus I. Flik.en_US
dc.contributor.authorHebb, Jeffrey Paulen_US
dc.date.accessioned2009-11-06T16:05:26Z
dc.date.available2009-11-06T16:05:26Z
dc.date.copyright1993en_US
dc.date.issued1993en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/49584
dc.descriptionThesis (M.S.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 1993.en_US
dc.descriptionIncludes bibliographical references (leaves 68-70).en_US
dc.description.statementofresponsibilityby Jeffrey Paul Hebb.en_US
dc.format.extent70 leavesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectMechanical Engineeringen_US
dc.titleInfrared absorption in doped semiconductors due to direct intersubband transitionsen_US
dc.typeThesisen_US
dc.description.degreeM.S.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineering
dc.identifier.oclc28305450en_US


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