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dc.contributor.authorAdler, Richard B.en_US
dc.date.accessioned2010-03-03T19:19:44Z
dc.date.available2010-03-03T19:19:44Z
dc.date.issued1958-01-15en_US
dc.identifierRLE_QPR_048_XIIIen_US
dc.identifier.urihttp://hdl.handle.net/1721.1/52134
dc.descriptionContains research objectives.en_US
dc.description.sponsorshipLincoln Laboratory, Purchase Order DDL-B222en_US
dc.description.sponsorshipDepartment of the Armyen_US
dc.description.sponsorshipDepartment of the Navyen_US
dc.description.sponsorshipDepartment of the Air Force under Contract AF19(122)-458en_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Quarterly Progress Report, January 15, 1958en_US
dc.relation.ispartofTransistor and Diode Studiesen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Quarterly Progress Report, no. 48en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherTransistor and Diode Studiesen_US
dc.titleTransistor and Diode Studiesen_US
dc.typeTechnical Reporten_US


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