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dc.contributor.advisorDanny Butterfield and Joel L. Dawson.en_US
dc.contributor.authorVo, Danh Ten_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2010-03-25T15:09:17Z
dc.date.available2010-03-25T15:09:17Z
dc.date.copyright2009en_US
dc.date.issued2009en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/53165
dc.descriptionThesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.en_US
dc.descriptionIncludes bibliographical references.en_US
dc.description.abstractThe recent surge in the demand for low power portable wireless electronics that can offer extremely high data rates has resulted in much active research in Ultra-Wideband (UWB) systems. UWB is widely recognized as a promising technology for high data rate, short-range applications with precise time resolution and high energy efficiency. All these benefits originate from the wideband characteristic of the transmitted/received impulse signals in an UWB system. With current technology, UWB can offer data rates up to 480 Mbps and its operational frequency spectrum is between 3.1 and 10.6 GHz. However, the wideband operation of UWB systems imposes many design challenges that have not been explored before in the traditional narrowband ones. This research is focused on the analysis and design of a low noise amplifier (LNA) for UWB applications. First, two popular narrowband topologies based on inductively degenerated common-source and common-gate configurations are introduced. A comparison between these two topologies is also presented. Then, several wideband LNA topologies are presented and analyzed to determine their suitability for wideband operation. The main emphasis is on input matching, voltage gain, noise figure, and process variation tolerance. Finally, a design procedure is proposed. Examples of applying this procedure to implement a single-ended and differential multistage LNA in 65 nm CMOS process are also given. Both LNAs are designed to have a gain of at least 45 dB, a noise figure of less than 8 dB and an S₁₁ of better than -10 dB while drawing less than 10 mA from a 1.3 V power supply. The LNA's operating frequency is 8.5 GHz.en_US
dc.description.statementofresponsibilityby Danh T. Vo.en_US
dc.format.extent[96] p.en_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleDesign of low noise amplifier for ultra-wideband applicationsen_US
dc.typeThesisen_US
dc.description.degreeM.Eng.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc516255614en_US


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