Generalized drift-diffusion for microscopic thermoelectricity
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Rajeev J. Ram.
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Although thermoelectric elements increasingly incorporate nano-scale features in similar material systems as other micro-electronic devices, the former are described in the language of irreversible thermodynamics while devices such as heterojunction bipolar transistors and semiconductor lasers are often described with the drift-diffusion equations. We present a microscopic description of the thermoelectric effects using a generalization of the common drift-diffusion formulation of semi-classical transport. We then replicate these basic results in a commerical device simulation package to explore Peltier cooling at a basic p-n junction. This framework should enable the design of spatially-inhomogenenous thermoelectric elements and internally-cooled micro-electronic devices.
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.Cataloged from PDF version of thesis.Includes bibliographical references (p. 191-193).
DepartmentMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology
Electrical Engineering and Computer Science.