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dc.contributor.authorKastner, Marc A.en_US
dc.date.accessioned2010-07-15T20:51:29Z
dc.date.available2010-07-15T20:51:29Z
dc.date.issued1979-01en_US
dc.identifierRLE_PR_121_XVIen_US
dc.identifier.urihttp://hdl.handle.net/1721.1/56731
dc.descriptionContains report on one research project.en_US
dc.description.sponsorshipJoint Services Electronics Program (Contract DAAG29-78-C-0020)en_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1979en_US
dc.relation.ispartofGeneral Physicsen_US
dc.relation.ispartofElectronic Properties of Charged Centers in Si0₂-like Glassesen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 121en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherElectronic Properties of Charged Centers in Si0₂-like Glassesen_US
dc.titleElectronic Properties of Charged Centers in Si0₂-like Glassesen_US
dc.typeTechnical Reporten_US


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