| dc.contributor.author | Kastner, Marc A. | en_US |
| dc.date.accessioned | 2010-07-15T21:10:16Z | |
| dc.date.available | 2010-07-15T21:10:16Z | |
| dc.date.issued | 1981-01 | en_US |
| dc.identifier | RLE_PR_123_XVII | en_US |
| dc.identifier.uri | http://hdl.handle.net/1721.1/56792 | |
| dc.description | Contains report on one research project. | en_US |
| dc.description.sponsorship | Joint Services Electronics Program (Contract DAAG29-78-C-0020) | en_US |
| dc.description.sponsorship | Joint Services Electronics Program (Contract DAAG29-80-C-0104) | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) | en_US |
| dc.relation.ispartof | Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1981 | en_US |
| dc.relation.ispartof | General Physics | en_US |
| dc.relation.ispartof | Electronic Properties of Intrinsic Defects in Amorphous Silicon Dioxide | en_US |
| dc.relation.ispartofseries | Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 123 | en_US |
| dc.rights | Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. | en_US |
| dc.subject.other | Electronic Properties of Intrinsic Defects in Amorphous Silicon Dioxide | en_US |
| dc.title | Electronic Properties of Intrinsic Defects in Amorphous Silicon Dioxide | en_US |
| dc.type | Technical Report | en_US |
