High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications

Author(s)
del Alamo, Jesus A.; Bahl, Sandeep R.; Azzam, Walid; Odoardi, Angela R.
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Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.
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Description
Contains an introduction and reports on experiments and device results.
Date issued
1989-01-01
URI
http://hdl.handle.net/1721.1/57088
Publisher
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Other identifiers
RLE_PR_132_01_01s_07
Series/Report no.
Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 132
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