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dc.contributor.authorKastner, Marc A.en_US
dc.contributor.authorAntoniadis, Dimitri A.en_US
dc.contributor.authorField, Stuart B.en_US
dc.contributor.authorSmith, Henry I.en_US
dc.contributor.authorHeiblum, Mordehaien_US
dc.contributor.authorWind, Shalomen_US
dc.contributor.authorMeirav, Udien_US
dc.contributor.authorPark, Samuel L.en_US
dc.contributor.authorScott-Thomas, John H. F.en_US
dc.contributor.authorOdoardi, Angela R.en_US
dc.date.accessioned2010-07-16T04:12:37Z
dc.date.available2010-07-16T04:12:37Z
dc.date.issued1989-01-01 to 1989-12-31en_US
dc.identifierRLE_PR_132_01_03s_04en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/57126
dc.descriptionContains a description on one research project.en_US
dc.description.sponsorshipJoint Services Electronics Program DAAL03-89-C-0001en_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1989en_US
dc.relation.ispartofSolid State Physics, Electronics and Opticsen_US
dc.relation.ispartofSurfaces and Interfacesen_US
dc.relation.ispartofUltralow Temperature Studies of Nanometer Size Semiconductor Devicesen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 132en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherUltralow Temperature Studies of Nanometer Size Semiconductor Devicesen_US
dc.subject.otherProject Descriptionen_US
dc.titleUltralow Temperature Studies of Nanometer Size Semiconductor Devicesen_US
dc.typeTechnical Reporten_US


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